rev. b nov.2008 copyright @ winsemi semiconductor co., ltd., all rights reserved. WTPB12A60CW t03-3 sensitive gate bi-directional triode thyristor features repetitive peak off-state voltage: 600v r.m.s on-state current(i t(rms) =12a low on-state voltage: v tm =1.55v(max.)@ i t =17a high commutation dv/dt. general description general purpose swithhing and phase control applications. these devices are intended to be interfaced directly to micro-controllers, logic integ rated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting cont rol and static switching relay. absolute maximum ratings (tj=25 unless otherwise specified) symbol parameter value units v drm /v prm peak repetitive forward blocking voltage(gate open) (note 1) 600 v i t(rms) forward current rms (all conduction angles, tj=58 )12a i tsm peak forward surge current, (full cycle, sine wave, 50/60 hz) 120/126 a i 2 t circuit fusing considerations (tp= 10 ms) 100 a 2 s p gm peak gate power ? forward, (tj = 58c,pulse with 1.0us) 5 w p g(av) average gate power ? forward, (over any 20ms period) 1 w di/dt critical rate of rise of on-state current i tm = 20a; i g =200ma;di g /dt = 200ma/ s t j =125 50 a/ s i fgm peak gate current ? forward, t j = 125c (20 s, 120 pps) 4 a v rgm peak gate voltage ? reverse, t j = 125c (20 s, 120 pps) 10 v t j, junction temperature -40~125 t stg storage temperature -40~150 note1: .although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switjh to the on-state. the rate of rise of current should not exceed 15a/us. thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 1.4 /w r qja thermal resistance, junction-to-ambient - - 60 /w www.datasheet.in
2 / 5 copyright @ winsemi semiconductor co., ltd., all rights reserved. WTPB12A60CW 8 electrical characteristics (t j =25c unless otherwise specified) symbol characteristics min typ. max unit i drm/ /i rrm peak forward or reverse blocking current (v drm =v rrm, ) t j =25 --5 a t j =125 --1ma v tm forward ?on? voltage (note2) (i tm = 17a tp=380 s) - - 1.55 v i gt gate trigger current (continuous dc) (v d =12vdc,r l =33 ? ) t2+g+ t2+g- t2-g- - - - - - - 30 30 30 ma v gt gate trigger voltage (continuous dc) (v d =12 vdc, r l =33 ? ) t2+g+ t2+g- t2-g- - - - - - - 1.2 1.2 1.2 v v gd gate threshold voltage( v d =v drm, rl = 3.3 k ? ,t j =125 ,) 0.2 - - v dv/dt critical rate of rise of commutation voltage (v d =0.67v drm )40 - -v/ s i h holding current (i t = 500 ma) (note 3) --25ma i l latching current (v d =12 vdc,i gt =0.1a) t2+g+ t2+g- t2-g- - - - - - - 40 70 40 ma r d dynamic resistance --35m ? note 2. forward current applied for 1 ms maximum duration, duty cycle note 3. for both polarities of a2 to a1 www.datasheet.in
3 / 5 copyright @ winsemi semiconductor co., ltd., all rights reserved. WTPB12A60CW fig.6 fig.5 fig.3 fig.4 fig.1 fig.2 www.datasheet.in
4 / 5 copyright @ winsemi semiconductor co., ltd., all rights reserved. WTPB12A60CW 8 fig.8 fig.10 gate trigger characteristics test circuit fig.7 fig.9 www.datasheet.in
5 / 5 copyright @ winsemi semiconductor co., ltd., all rights reserved. WTPB12A60CW to-220 package dimension unit: mm www.datasheet.in
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